PART |
Description |
Maker |
EN29F512 EN29F512-55TCP EN29F512-55TC EN29F512-45J |
512 Kbit (64K x 8-bit) 5V Flash Memory
|
ETC[ETC] Eon Silicon Solution Inc.
|
M27512 M27512-3F6 27512 M27256-20F6 M27256-25F6 M2 |
NMOS 512 Kbit (64Kb x 8) UV EPROM, 250ns NND - NMOS 512 KBIT (64KB X8) UV EPROM NMOS 512K 64K x 8 UV EPROM NMOS管为512k 64KX8的紫外线存储 NMOS 512K 64K x 8 UV EPROM
|
SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
|
M27V512-200N1 M27V512 |
NND - 512 KBIT (64KB X8) LOW VOLTAGE UV EPROM AND OTP EPROM 64K X 8 OTPROM, 200 ns, PDSO28
|
ST Microelectronics STMICROELECTRONICS
|
M27C512-45XF6 M27C512 M27C512-10B1 M27C512-10B3 M2 |
512 Kbit (64K x8) UV EPROM and OTP EPROM
|
STMICROELECTRONICS[STMicroelectronics]
|
CY14B512PA-SFXI CY14B512PA-SFXIT CY14E512PA |
64K X 8 NON-VOLATILE SRAM, PDSO16 0.300 INCH, ROHS COMPLIANT, MO-119, SOIC-16 512-Kbit (64 K x 8) SPI nvSRAM with Real Time Clock Full-featured RTC
|
Cypress Semiconductor, Corp.
|
AT28BV64B-25TC AT28BV64B-20PC AT28BV64B-20JI AT28B |
64K (8K x 8) Battery-Voltage?/a> Parallel EEPROM with Page Write and Software Data Protection 64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM with Page Write and Software Data Protection From old datasheet system 64K EEPROM with 64-Byte Page & Software Protection, 2.7-Volt 64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection High Speed CMOS Logic Triple 3-Input OR Gates 14-SOIC -55 to 125 8K X 8 EEPROM 3V, 250 ns, PDSO28 64K (8K x 8) Battery-VoltageParallel EEPROM with Page Write and Software Data Protection 8K X 8 EEPROM 3V, 200 ns, PDSO28
|
ATMEL[ATMEL Corporation] Atmel, Corp.
|
AT28C64BNBSP AT28C64B-15PI AT28C64B-20PI AT28C64B- |
64K 8K x 8 Battery-Voltage CMOS E2PROM 8K X 8 EEPROM 5V, 150 ns, PDSO28 Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-VQFN -40 to 85 8K X 8 EEPROM 5V, 150 ns, PDSO28 64K 8K x 8 CMOS E2PROM 8-Bit Shift Registers With Output Registers 16-SSOP -40 to 85 64K EEPROM with 64-Byte Page & Software Data Protection 64K (8K x 8) CMOS E2PROM with Page Write and Software Data Protection From old datasheet system 64K (8K x 8) Parallel EEPROM with Page Write and Software Data Protection
|
Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation]
|
T221160A-35S T221160A-30J T221160A T221160A-30S T2 |
64K x 16 DYNAMIC RAM FAST PAGE MODE 64K的16动态RAM快速页面模
|
TM Technology, Inc. TMT[Taiwan Memory Technology]
|
SST29EE512 29EE512B |
5.0V-only 512 Kilobit Page Mode EEPROM From old datasheet system
|
SST
|
AM27C512-15F6 AM27C512-120PC AM27C512-70DI ADVANCE |
64K X 8 UVPROM, 120 ns, CDIP28 64K X 8 OTPROM, 90 ns, PDIP28 64K X 8 UVPROM, 55 ns, CDIP28 64K X 8 UVPROM, 90 ns, CDIP28 64K X 8 UVPROM, 70 ns, CDIP28 IC 集成电路 512 Kilobit (64 K x 8-Bit) CMOS EPROM
|
ADVANCED MICRO DEVICES INC SPANSION LLC Rochester Electronics, LLC AMD
|
GLT41116 GLT4116-30J4 GLT4116-30TC GLT4116-35J4 GL |
64k x 16 CMOS Dynamic RAM with Fast Page Mode 64k的16的CMOS动态随机存储器的快速页面模
|
Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
|
M24512 M24512BN 6757 MM24512-MJ5T MM24512-MJ6T MM2 |
From old datasheet system 512 Kbit Serial IC Bus EEPROM 512 Kbit Serial I2C Bus EEPROM
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|